1 hmic? silicon pin diode switch es with integrated bias network rev. v5 masw-002102-13580 masw-003102-13590 ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. parameter absolute maximum operating temperature -65 o c to +125 o c storage temperature -65 o c to +150 o c junction temperature +175 o c applied reverse voltage 50v rf incident power +33dbm c.w. bias current +25c 20ma max. operating conditions for a combination of rf power, d.c. bias and temperature: +33dbm cw @ 15ma (per diode) @+85c masw-002102-13580 masw-003102-13590 features ?? broad bandwidth specified up to 18 ghz ?? usable up to 26 ghz ?? integrated bias network ?? low insertion loss / high isolation ?? rugged ?? fully monolithic ?? glass encapsulate construction ?? rohs compliant* and 260c reflow compatible description the masw-002102-13580 and masw-003102-13590 devices are sp2t and sp3t broad band switches with integrated bias networks ut ilizing m/a-com technology solutions hmic tm (heterolithic microwave integrated circuit) process, us patent 5,268,310. this process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion gla ss. by using small spacing between elements, this combination of silicon and glass gives hmic devices low loss and high isolation per- formance with exceptional repeatability through low millimeter frequencies. large bond pads facilitate the use of low inductance ribbon bonds, while gold back- side metallization allows for m anual or automatic chip bonding via 80/20 - au/sn, 62/36/2 - sn/pb/ag solders or electrically conductive silver epoxy. yellow areas denote wire bond pads * restrictions on hazardous substanc es, european union directive 2002/95/ec.
2 hmic? silicon pin diode switch es with integrated bias network rev. v5 masw-002102-13580 masw-003102-13590 ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. masw-002102-13580 ( spdt ) electrical specifications @ t amb = +25 o c, 20ma bias current masw-003102-13590 (sp3t) electrical specifications @ t amb = +25 o c, 20ma bias current parameter frequency minimum nominal maximum units insertion loss 2 ghz 1.5 1.8 db 6 ghz 0.70 1.0 db 12 ghz 0.90 1.2 db 18 ghz 1.2 1.8 db isolation 2 ghz 55 60 db 6 ghz 47 50 db 12 ghz 40 45 db 18 ghz 36 40 db 2 ghz 14 db 6 ghz 15 db 12 ghz 15 db 18 ghz 13.0 db switching speed 1 - 50 ns input return loss parameter frequency minimum nominal maximum units insertion loss 2 ghz 1.6 2.0 db 6 ghz 0.8 1.1 db 12 ghz 1.0 1.3 db 18 ghz 1.3 1.9 db isolation 2 ghz 54 59 db 6 ghz 47 50 db 12 ghz 40 45 db 18 ghz 36 40 db 2 ghz 14 db 6 ghz 15 db 12 ghz 16 db 18 ghz 14 db switching speed 1 - 50 ns input return loss 1. typical switching speed measured from 10% to 90% of detect ed rf signal driven by ttl compatible drivers using rc output spiking network, r = 50 ? 200 ? , c = 390 ? 560pf. note:
3 hmic? silicon pin diode switch es with integrated bias network rev. v5 masw-002102-13580 masw-003102-13590 ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. typical rf performance at t a = +25c, 20ma bias current isolation vs frequency masw-002102-13580 -70 -60 -50 -40 -30 -20 -10 0 0 2 4 6 8 101214161820222426 frequency, ghz isolation, db insertion loss vs frequency masw-002102-13580 -8 -6 -4 -2 0 2 0 2 4 6 8 10 12 14 16 18 20 22 24 26 frequency, ghz insertion loss, db isolation vs frequency masw-003102-13590 -70 -60 -50 -40 -30 -20 -10 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 frequency, ghz isolation, db insertion loss vs frequency masw-003102-13590 -8 -6 -4 -2 0 2 0 2 4 6 8 101214161820222426 frequency, ghz insertion loss, db return loss vs frequency masw-003102-13590 -40 -35 -30 -25 -20 -15 -10 -5 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 frequency, ghz return loss, db
4 hmic? silicon pin diode switch es with integrated bias network rev. v5 masw-002102-13580 masw-003102-13590 ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. 20 40 60 80 100 120 140 10.00 15.00 20.00 25.00 30.00 35.00 c.w. incident power ( dbm ) tjunction ( deg. c ) series diode_5ma series diode_10ma series diode_20ma series diode_40ma 5 ma 20 ma 10 ma 40 ma masw-002102-13580 junction temperature vs. incident power at 8 ghz masw-002102-13580 compression power vs. incident power at 8 ghz 0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 10.00 15.00 20.00 25.00 30.00 35.00 c.w. incident power ( dbm ) compression power ( db ) series diode_5ma series diode_10ma series diode_20ma series diode_40ma 5 ma 10 ma 20 ma 40 ma note: the pin diodes in the masw-002102-13580 and the masw-003102-13590 have the same electrical characteristics and will have similar performance.
5 hmic? silicon pin diode switch es with integrated bias network rev. v5 masw-002102-13580 masw-003102-13590 ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. operation of the masw -002102-13580 and masw-003102-13590 operation of the masw-002102-13580 and masw-003102-13590 pin diode switches is achieved by simultaneous application of dc currents to the bias pads. the required leve ls for the different states are shown in the tables below. the on-ch ip pull-up resistor @ j1, shown in the schematic below, has a value of 40 ? - 60 ? and must be taken into considerati on when defining drive circuitry. driver connections masw-002102-13580 control level i dc @ condition of rf output condition of rf output j4 j5 j1 - j2 j1 - j3 -20ma +20ma low loss isolation +20ma -20ma isolation low loss driver connections masw-003102-13590 control level i dc @ condition of rf output condition of rf output condition of rf output j5 j6 j7 j1 - j2 j1 - j3 j1 - j4 -20ma +20ma +20ma low loss isolation isolation +20 ma -20ma +20ma isolation low loss isolation +20ma +20ma -20ma isolation isolation low loss equivalent circuit masw-002102-13580 equivalent circuit masw-003102-13590
6 hmic? silicon pin diode switch es with integrated bias network rev. v5 masw-002102-13580 masw-003102-13590 ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. wire bonding thermosonic wedge wire bonding using 0.00025? x 0.003? ribbon or 0. 001? diameter gold wire is recommended. a heat stage temperature of 150 o c and a force of 18 to 22 grams should be used. ultrasonic energy should be adjusted to the minimum required to achieve a good bond. rf bond wires should be kept as short and straight as possible. chip mounting the hmic switches have ti-pt-au back metal. they c an be die mounted with a gold-tin eutectic solder preform or conductive epoxy. mounting surface must be clean and flat. *note: this device utilizes a proc ess step designed to have minimal to non-existent burring around the perimeter of the die. eutectic die attachment: an 80/20, gold-tin, eutectic solder preform is recommended with a work surface temperature of 255 o c and a tool tip temperature of 265 o c. when hot gas is applied, the tool tip temperature should be 290 o c. the chip should not be exposed to temperatures greater than 320 o c for more than 20 seconds. no more than three seconds should be r equired for attachment. solders containing tin should not be used. epoxy die attachment: a minimum amount of epoxy should be used. a thin epoxy fillet should be visible around the perimeter of the chip after placement. cure epoxy per manufacturer?s schedule (typically 125- 150 o c). masw-002102-13580 chip outline drawing 1 , 2 notes: 1. topside and backside metallizati on is gold, 2.5um thick typical. 2. yellow areas indicate wire bonding pads inches millimeters min max min max a 0.066 0.070 1.680 1.780 b 0.048 0.052 1.230 1.330 c 0.004 0.006 0.100 0.150 d 0.004 0.006 0.090 0.140 e 0.012 0.013 0.292 0.317 f 0.029 0.030 0.735 0.760 g 0.030 0.031 0.766 0.791 h 0.029 0.030 0.732 0.757 j 0.005 ref. 0.129 ref. k 0.005 ref. 0.129 ref. dim wire/ribbon and die atta chment recommendations
7 hmic? silicon pin diode switch es with integrated bias network rev. v5 masw-002102-13580 masw-003102-13590 ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. masw-003102-13590 chip outline drawing 1,2 notes: 1. topside and backside metallization is gold , 2.5um thick typical. 2. yellow areas indicate wire bonding pads inches millimeters min max min max a 0.0697 0,0736 1.770 1.870 b 0.0693 0.0732 1.760 1.860 c 0.0039 0.0059 0.100 0.150 d 0.0310 0.0319 0.787 0.812 e 0.0289 0.0299 0.734 0.759 f 0.0055 0.0075 0.140 0.190 g 0.0035 0.0055 0.089 0.139 h 0.0044 0.0064 0.113 0.163 j 0.0338 0.0358 0.859 0.909 k 0.0632 0.0652 1.610 1.660 l 0.0660 0.0680 1.680 1.730 m 0.0051 ref. 0.1290 ref. n 0.0046 ref. 0.1180 ref. dim ordering information part number package masw-002102-13580g gel pack (25 per) masw-002102-13590w waffle pack (25 per) MASW-003102-13590G gel pack (25 per) masw-003102-13590w waffle pack (25 per)
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